The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Mar. 22, 2013
Applicant:
Hermes Microvision Inc., Hsinchu, TW;
Inventors:
Weiming Ren, San Jose, CA (US);
Xiaoli Guo, Beijing, CN;
Xuedong Liu, San Jose, CA (US);
Zhongwei Chen, San Jose, CA (US);
Assignee:
Hermes Microvision Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); H01J 37/28 (2006.01); H01J 37/141 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a charged particle beam apparatus which employs LVSEM to inspect sample surface with a throughput much higher than the prior art. The high throughput is realized by providing a probe current and a FOV both several times of those of the prior art. Accordingly several means are proposed to avoid obvious degradation of image resolution due to the increases in Coulomb effect and geometric aberrations, and increase efficiency and uniformity of secondary charged particle collection.