The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jul. 22, 2009
Takashi Ichiryu, Osaka, JP;
Seiichi Nakatani, Osaka, JP;
Koichi Hirano, Osaka, JP;
Yoshihisa Yamashita, Kyoto, JP;
Shingo Komatsu, Osaka, JP;
Takashi Ichiryu, Osaka, JP;
Seiichi Nakatani, Osaka, JP;
Koichi Hirano, Osaka, JP;
Yoshihisa Yamashita, Kyoto, JP;
Shingo Komatsu, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for fabricating a flexible semiconductor device includes: preparing a layered filmincluding a first metal layer, an inorganic insulating layer, a semiconductor layer, and a second metal layerwhich are sequentially formed; etching the first metal layerto form a gate electrode; compression bonding a resin layerto a surface of the layered filmprovided with the gate electrodeto allow the gate electrodeto be embedded in the resin layer; and etching the second metal layerto form a source electrodeand a drain electrode, wherein the inorganic insulating layeron the gate electrodefunctions as a gate insulating film, and the semiconductor layerbetween the source electrodeand drain electrodeon the inorganic insulating layerfunctions as a channel