The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Nov. 01, 2011
Huang-chung Cheng, Hsinchu, TW;
Yu-chih Huang, Hsinchu, TW;
Po-yu Yang, Hsinchu, TW;
Shin-chuan Chiang, Taipei, TW;
Huai-an LI, Taoyuan County, TW;
Huang-Chung Cheng, Hsinchu, TW;
Yu-Chih Huang, Hsinchu, TW;
Po-Yu Yang, Hsinchu, TW;
Shin-Chuan Chiang, Taipei, TW;
Huai-An Li, Taoyuan County, TW;
Chunghwa Picture Tubes, Ltd., Padeh, Taoyuan, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.