The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2013

Filed:

Dec. 19, 2011
Applicants:

Ryuichi Asako, Yamanashi, JP;

Gousuke Shiraishi, Tokyo, JP;

Shigeru Tahara, Yamanashi, JP;

Inventors:

Ryuichi Asako, Yamanashi, JP;

Gousuke Shiraishi, Tokyo, JP;

Shigeru Tahara, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to COplasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a COplasma processing mechanism for performing a COplasma process that exposes the substrate to COplasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the COplasma process; and a transfer mechanism for transferring the substrate.


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