The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Nov. 29, 2011
Applicants:
Jinhong Tong, Santa Clara, CA (US);
Frederick Fulgenico, San Jose, CA (US);
Shouqian Shao, Fremont, CA (US);
Inventors:
Jinhong Tong, Santa Clara, CA (US);
Frederick Fulgenico, San Jose, CA (US);
ShouQian Shao, Fremont, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum or tungsten layer on a TiN layer on an HfOor ZrOlayer on a silicon substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a first wet etch using a mixture of NHOH and HOto selectively etch the TiN layer, and a second wet etch using a dilute mixture of HF and HCl to selectively etch the HfOor ZrOlayer.