The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 18, 2008
Wonchul Lee, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
Shenjian Liu, San Ramon, CA (US);
Bryan Pu, San Jose, CA (US);
Wonchul Lee, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
Shenjian Liu, San Ramon, CA (US);
Bryan Pu, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.