The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Nov. 22, 2011
Cheng-chieh Hsieh, Yongkang, TW;
Hung-an Teng, Taoyuan, TW;
Shang-yun Hou, Hsin-Chu, TW;
Shin-puu Jeng, Hsin-Chu, TW;
Cheng-Chieh Hsieh, Yongkang, TW;
Hung-An Teng, Taoyuan, TW;
Shang-Yun Hou, Hsin-Chu, TW;
Shin-Puu Jeng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.