The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Apr. 26, 2007
Frank Dimeo, Falls Church, VA (US);
James Dietz, Allison Park, PA (US);
W. Karl Olander, Indian Shores, FL (US);
Robert Kaim, Brookline, MA (US);
Steven Bishop, Corrales, NM (US);
Jeffrey W. Neuner, Bethel, CT (US);
Jose Arno, Brookfield, CT (US);
Paul J. Marganski, Seymore, CT (US);
Joseph D. Sweeney, New Milford, CT (US);
David Eldridge, Liberty Hill, TX (US);
Sharad Yedave, Danbury, CT (US);
Oleg Byl, Southbury, CT (US);
Gregory T. Stauf, Branchburg, NJ (US);
Frank Dimeo, Falls Church, VA (US);
James Dietz, Allison Park, PA (US);
W. Karl Olander, Indian Shores, FL (US);
Robert Kaim, Brookline, MA (US);
Steven Bishop, Corrales, NM (US);
Jeffrey W. Neuner, Bethel, CT (US);
Jose Arno, Brookfield, CT (US);
Paul J. Marganski, Seymore, CT (US);
Joseph D. Sweeney, New Milford, CT (US);
David Eldridge, Liberty Hill, TX (US);
Sharad Yedave, Danbury, CT (US);
Oleg Byl, Southbury, CT (US);
Gregory T. Stauf, Branchburg, NJ (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.