The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Sep. 20, 2010
Ramakanth Alapati, Boise, ID (US);
Ardavan Niroomand, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Ramakanth Alapati, Boise, ID (US);
Ardavan Niroomand, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Micron Technology Inc., Boise, ID (US);
Abstract
The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to form a first opening having a first width. The first opening is narrowed with a conformal layer of carbon-containing material. The conformal layer is punched through to expose substrate along a bottom of the narrowed opening. The exposed substrate is removed to form a second opening which joins to the first opening, and which has a second width less than the first width. The carbon-containing material is then removed from within the first opening, and electrically insulative material is formed within the first and second openings. The electrically insulative material can substantially fill the first opening, and leave a void within the second opening.