The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Oct. 07, 2010
Applicants:
Tadahiro Ohmi, Sendai, JP;
Hirokazu Asahara, Kyoto, JP;
Atsutoshi Inokuchi, Tokyo, JP;
Inventors:
Assignees:
National University Corporation Tohoku University, Miyagi, JP;
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/365 (2006.01);
U.S. Cl.
CPC ...
Abstract
It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.