The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jun. 28, 2012
Feng-yi Chang, Chiayi County, TW;
Pei-yu Chou, New Taipei, TW;
Jiunn-hsiung Liao, Tainan, TW;
Chih-wen Feng, Tainan, TW;
Ying-chih Lin, Tainan, TW;
Po-chao Tsao, New Taipei, TW;
Feng-Yi Chang, Chiayi County, TW;
Pei-Yu Chou, New Taipei, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Chih-Wen Feng, Tainan, TW;
Ying-Chih Lin, Tainan, TW;
Po-Chao Tsao, New Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.