The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 15, 2011
Chih-ching Lin, Taoyuan County, TW;
Yi-nan Chen, Taoyuan County, TW;
Hsien-wen Liu, Taoyuan County, TW;
Chih-Ching Lin, Taoyuan County, TW;
Yi-Nan Chen, Taoyuan County, TW;
Hsien-Wen Liu, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for fabricating a fin-shaped semiconductor structure is provided, including: providing a semiconductor substrate with a semiconductor island and a dielectric layer formed thereover; forming a mask layer over the semiconductor island and the dielectric layer; forming an opening in the mask layer, exposing a top surface of the semiconductor island and portions of the dielectric layer adjacent to the semiconductor island; performing an etching process, simultaneously etching portions of the mask layer, and portions of the semiconductor island and the dielectric layer exposed by the opening; and removing the mask layer and the dielectric layer, leaving an etched semiconductor island with curved top surfaces and various thicknesses over the semiconductor substrate.