The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Dec. 16, 2011
Tung-ti Yeh, Tainan, TW;
Wu-chang Lin, Taichung, TW;
Chung-yi Huang, New Taipei, TW;
Ya Wen Wu, Kaohsiung, TW;
Hui-mei Jao, Tainan, TW;
Ting-chun Wang, Tainan, TW;
Chia-hung Chung, Shanhua Township, TW;
Tung-Ti Yeh, Tainan, TW;
Wu-Chang Lin, Taichung, TW;
Chung-Yi Huang, New Taipei, TW;
Ya Wen Wu, Kaohsiung, TW;
Hui-Mei Jao, Tainan, TW;
Ting-Chun Wang, Tainan, TW;
Chia-Hung Chung, Shanhua Township, TW;
Abstract
A wafer including a substrate, a dielectric layer over the substrate, and a conductive layer over the dielectric layer is disclosed. The substrate has a main portion. A periphery of the dielectric layer and the periphery of the main portion of the substrate are separated by a first distance. A periphery of the conductive layer and the periphery of the main portion of the substrate are separated by a second distance. The second distance ranges from about a value that is 0.5% of a diameter of the substrate less than the first distance to about a value that is 0.5% of the diameter greater than the first distance.