The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Dec. 11, 2009
Applicants:
David Cheung, Foster City, CA (US);
Ted LI, Sunnyvale, CA (US);
Anirban Guha, Milpitas, CA (US);
Kirk Ostrowski, San Jose, CA (US);
Inventors:
David Cheung, Foster City, CA (US);
Ted Li, Sunnyvale, CA (US);
Anirban Guha, Milpitas, CA (US);
Kirk Ostrowski, San Jose, CA (US);
Assignee:
Novellus Systems, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B08B 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.