The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jun. 24, 2011
Chien-yuan Chen, Taichung, TW;
Yi-tzu Chen, Hsin-Chu, TW;
Hau-tai Shieh, Hsin-Chu, TW;
Tsung-yung Jonathan Chang, Hsin-Chu, TW;
Chien-Yuan Chen, Taichung, TW;
Yi-Tzu Chen, Hsin-Chu, TW;
Hau-Tai Shieh, Hsin-Chu, TW;
Tsung-yung Jonathan Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Exemplary embodiments for SRAM cells, new control units for SRAM systems, and embodiments of SRAM systems are described herein. An SRAM cell is configured to receive a first input voltage signal and a second input voltage signal with a different value from the first input voltage signal, and to maintain a first stored value signal and a second stored value signal. A control circuit is configured to receive a first input voltage signal and a second input voltage signal, and controlled by a sleep signal, a selection signal, and a data input signal, so that the output of the control circuit is data sensitive to the data input signal. An SRAM system comprises a plurality of SRAM cells, controlled the disclosed control circuit wherein an SRAM cell has two input voltage signals controlled by a data input signal and its complement signal respectively.