The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jan. 23, 2012
Xinyu Fu, Pleasanton, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Kavita Shah, Mountain View, CA (US);
Yu Lei, Foster City, CA (US);
Xinyu Fu, Pleasanton, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Kavita Shah, Mountain View, CA (US);
Yu Lei, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.