The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2013

Filed:

Dec. 13, 2011
Applicants:

Hong Shih, Walnut, CA (US);

Duane Outka, Fremont, CA (US);

Shenjian Liu, Fremont, CA (US);

John Daugherty, Alameda, CA (US);

Inventors:

Hong Shih, Walnut, CA (US);

Duane Outka, Fremont, CA (US);

Shenjian Liu, Fremont, CA (US);

John Daugherty, Alameda, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.


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