The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Sep. 23, 2008
Yian-liang Kuo, Hsin-Chu, TW;
Chien-yi Chen, Hsin-Chu, TW;
Yu-ting Lin, Hsin-Chu, TW;
Yung-sheng Huang, Hsin-Chu, TW;
Yian-Liang Kuo, Hsin-Chu, TW;
Chien-Yi Chen, Hsin-Chu, TW;
Yu-Ting Lin, Hsin-Chu, TW;
Yung-Sheng Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an integrated circuit structure includes providing a wafer having a first semiconductor chip, a second semiconductor chip, and a scribe line between and adjoining the first semiconductor chip and the second semiconductor chip; forming a notch in the scribe line, wherein the notch has a bottom no higher than a top surface of a semiconductor substrate in the wafer; forming a first insulation film over the wafer, wherein the first insulation film extends into the notch; removing a portion of the first insulation film from a center of the notch, wherein a remaining portion of the first insulation film comprises an edge in the notch; and sawing the wafer to separate the first semiconductor chip and the second semiconductor chip.