The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
May. 21, 2012
Witold P. Maszara, Morgan Hill, CA (US);
Ajey P. Jacob, Albany, NY (US);
Nicholas V. Licausi, Watervliet, NY (US);
Jody A. Fronheiser, Delmar, NY (US);
Kerem Akarvardar, Saratoga Springs, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Ajey P. Jacob, Albany, NY (US);
Nicholas V. LiCausi, Watervliet, NY (US);
Jody A. Fronheiser, Delmar, NY (US);
Kerem Akarvardar, Saratoga Springs, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a planarization process on the layer of insulating material to expose the patterned hard, performing a second etching process to remove the hard mask layer and to define a cavity within the layer of insulating material, forming a second portion of the fin within the cavity, wherein the second portion of the fin is comprised of a semiconducting material that is different than the substrate, and performing a third etching process on the layer of insulating material such that an upper surface of the insulating material is below an upper surface of the second portion of the fin.