The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 26, 2009
Alexis Drouin, La Tranche, FR;
Bernard Aspar, Saint Ismier, FR;
Christophe Desrumaux, La Buissiere, FR;
Olivier Ledoux, Grenoble, FR;
Christophe Figuet, Crolles, FR;
Alexis Drouin, La Tranche, FR;
Bernard Aspar, Saint Ismier, FR;
Christophe Desrumaux, La Buissiere, FR;
Olivier Ledoux, Grenoble, FR;
Christophe Figuet, Crolles, FR;
Soitec, Bernin, FR;
Abstract
The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.