The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 24, 2011
Po-jui Liao, Taichung, TW;
Tsung-lung Tsai, Tai-Nan, TW;
Chien-ting Lin, Hsinchu, TW;
Shao-hua Hsu, Taoyuan County, TW;
Shui-yen LU, Hsinchu County, TW;
Pei-yu Chou, Tainan, TW;
Shin-chi Chen, Tainan, TW;
Jiunn-hsiung Liao, Tainan, TW;
Shang-yuan Tsai, Kaohsiung, TW;
Chan-lon Yang, Taipei, TW;
Teng-chun Tsai, Tainan, TW;
Chun-hsien Lin, Tainan, TW;
Po-Jui Liao, Taichung, TW;
Tsung-Lung Tsai, Tai-Nan, TW;
Chien-Ting Lin, Hsinchu, TW;
Shao-Hua Hsu, Taoyuan County, TW;
Shui-Yen Lu, Hsinchu County, TW;
Pei-Yu Chou, Tainan, TW;
Shin-Chi Chen, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
Chan-Lon Yang, Taipei, TW;
Teng-Chun Tsai, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.