The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 03, 2011
Xiangxin Rui, San Jose, CA (US);
Sunil Shanker, Santa Clara, CA (US);
Sandra Malhotra, San Jose, CA (US);
Imran Hashim, Saratoga, CA (US);
Edward Haywood, San Jose, CA (US);
Xiangxin Rui, San Jose, CA (US);
Sunil Shanker, Santa Clara, CA (US);
Sandra Malhotra, San Jose, CA (US);
Imran Hashim, Saratoga, CA (US);
Edward Haywood, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.