The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Nov. 13, 2008
Luoqui Chen, Saratoga, CA (US);
Hong Chen, San Jose, CA (US);
Jiangwei LI, Palo Alto, CA (US);
Robert John Socha, Campbell, CA (US);
Luoqui Chen, Saratoga, CA (US);
Hong Chen, San Jose, CA (US);
Jiangwei Li, Palo Alto, CA (US);
Robert John Socha, Campbell, CA (US);
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of segmenting the target pattern into a plurality of patches; identifying critical features within each patch which violate minimum spacing requirements; generating a critical group graph for each of the plurality of patches having critical features, where the critical group graph of a given patch defines a coloring scheme of the critical features within the given patch, and the critical group graph identifies critical features extending into adjacent patches to the given patch; generating a global critical group graph for the target pattern, where the global critical group graph includes the critical group graphs of each of the plurality of patches, and an identification of the features extending into adjacent patches; and coloring the target pattern based on the coloring scheme defined by the global critical group graph.