The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Sep. 02, 2008
Kiyonori Oyu, Tokyo, JP;
Yoshihiro Takaishi, Tokyo, JP;
Yu Kosuge, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
In a vertical MOS transistor in which a semiconductor pillar is formed by etching a semiconductor substrate in a portion surrounded by an isolation film, the semiconductor pillar is covered with a gate insulating film and a gate electrode to be made a channel part, and diffusion layers to be a source and a drain are included on a top and a bottom of the channel part, electrode which controls potential of a gate electrode material is formed in gate electrode material formed on a side surface of isolation film, in order to eliminate a parasitic MOS operation by the gate electrode material remaining on the side surface of the isolation film.