The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Mar. 23, 2011
Akira Nakagawa, Nirasaki, JP;
Yusuke Okazaki, Nirasaki, JP;
Yoshinobu Hayakawa, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a substrate processing method configured to prevent the occurrence of a bowing shape to form a hole of a vertical processing shape on a mask layer, and to secure a remaining layer quantity as the mask layer. The substrate processing method receives a wafer W in which a mask layer and an intermediate layer are stacked on a target layer to be processed in a chamber, generates plasma of processing gas in the chamber, performs an etching process on wafer W using the plasma, thereby forming a pattern shape on the target layer to be processed through the intermediate layer and the mask layer. The etching process etches the mask layer by applying excitation power of 500 W for generating plasma, maintaining processing pressure at 5 mTorr (9.31×10Pa) or less, and maintain temperature of wafer W in the range of −10° C. to −20° C.