The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Mar. 31, 2008
Ming Sun, Sunnyvale, CA (US);
Kai Liu, Sunnyvale, CA (US);
Xiao Tian Zhang, San Jose, CA (US);
Yueh SE Ho, Sunnyvale, CA (US);
Leeshawn Luo, Santa Clara, CA (US);
Ming Sun, Sunnyvale, CA (US);
Kai Liu, Sunnyvale, CA (US);
Xiao Tian Zhang, San Jose, CA (US);
Yueh Se Ho, Sunnyvale, CA (US);
Leeshawn Luo, Santa Clara, CA (US);
Alpha & Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
This invention discloses a power device package for containing, protecting and providing electrical contacts for a power transistor. The power device package includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy. In another embodiment, a layer of conductive epoxy or adhesive, a solder paste, a carbon paste, or other types of attachment agents for direct no-bumping attaching the power transistor to one of the top and bottom lead frames.