The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Sep. 01, 2011
Karl Brown, San Jose, CA (US);
Alan Ritchie, Menlo Park, CA (US);
John Pipitone, Livermore, CA (US);
Ying Rui, Santa Clara, CA (US);
Daniel J. Hoffman, Fort Collins, CO (US);
Karl Brown, San Jose, CA (US);
Alan Ritchie, Menlo Park, CA (US);
John Pipitone, Livermore, CA (US);
Ying Rui, Santa Clara, CA (US);
Daniel J. Hoffman, Fort Collins, CO (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.