The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Dec. 10, 2012
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
R. Ramana Murthy, Singapore, SG;
Nansheng Shen, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Navab Singh, Singapore, SG;
Unisantis Electronics Singapore Pte Ltd., Peninsula Plaza, SG;
Abstract
A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a contact layer on the second drain/source region. The step for forming the contact layer includes forming a pattern and etching the contact interlayer film to the contact stopper film using the pattern to form a contact hole for the contact layer and removing the contact stopper film remaining at the bottom of the contact hole by etching. The projection of the bottom surface of the contact hole onto the substrate is within the circumference of the projected profile of the contact stopper film formed on the top and side surface of the columnar semiconductor layer onto the substrate.