The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Aug. 25, 2008
Shogo Okita, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Hiroyuki Suzuki, Osaka, JP;
Ryuzou Houchin, Osaka, JP;
Mitsuru Hiroshima, Osaka, JP;
Shogo Okita, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Hiroyuki Suzuki, Osaka, JP;
Ryuzou Houchin, Osaka, JP;
Mitsuru Hiroshima, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.