The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Nov. 14, 2011
Marco Jan-jaco Wieland, Delft, NL;
Alexander Hendrik Vincent Van Veen, Rotterdam, NL;
Hendrik Jan DE Jong, The Hague, NL;
Marco Jan-Jaco Wieland, Delft, NL;
Alexander Hendrik Vincent Van Veen, Rotterdam, NL;
Hendrik Jan De Jong, The Hague, NL;
Mapper Lithography IP B.V., Delft, NL;
Abstract
A charged particle lithography system for pattern transfer onto a target surface, comprising a beam generator for generating a plurality of beamlets, and a plurality of aperture array elements comprising a first aperture array, a blanker array, a beam stop array, and a projection lens array. Each aperture array element comprises a plurality of apertures arranged in a plurality of groups, wherein the aperture groups of each aperture array element form beam areas distinct and separate from non-beam areas formed between the beam areas and containing no apertures for beamlet passage. The beam areas are aligned to form beam shafts, each comprising a plurality of beamlets, and the non-beam areas are aligned to form non-beam shafts not having beamlets present therein. The first aperture array element is provided with cooling channels in the non-beam areas for transmission of a cooling medium for cooling the array element.