The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Mar. 04, 2011
Hyo-san Lee, Suwon-si, KR;
Bo-un Yoon, Seoul, KR;
Kun-tack Lee, Suwon-si, KR;
Hag-ju Cho, Hwaseong-si, KR;
Sang-jin Hyun, Suwon-si, KR;
Hoon-joo NA, Hwaseong-si, KR;
Hyung-seok Hong, Seoul, KR;
Hyo-San Lee, Suwon-si, KR;
Bo-Un Yoon, Seoul, KR;
Kun-Tack Lee, Suwon-si, KR;
Hag-Ju Cho, Hwaseong-si, KR;
Sang-Jin Hyun, Suwon-si, KR;
Hoon-Joo Na, Hwaseong-si, KR;
Hyung-Seok Hong, Seoul, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, KR;
Abstract
In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved.