The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Mar. 22, 2007
Xianmin Tang, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Rongjun Wang, Cupertino, CA (US);
Tza-jing Gung, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Jick Yu, San Jose, CA (US);
Hong Yang, Pleasanton, CA (US);
Xianmin Tang, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Rongjun Wang, Cupertino, CA (US);
Tza-Jing Gung, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Jick Yu, San Jose, CA (US);
Hong Yang, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.