The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Mar. 23, 2012
Zhengwen LI, Wappingers Falls, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Unoh Kwon, Fishkill, NY (US);
Filippos Papadatos, Wappigners Falls, NY (US);
Andrew H. Simon, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Zhengwen Li, Wappingers Falls, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Unoh Kwon, Fishkill, NY (US);
Filippos Papadatos, Wappigners Falls, NY (US);
Andrew H. Simon, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An electrical device is provided that in one embodiment includes a p-type semiconductor device having a first gate structure that includes a gate dielectric that is present on the semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure.