Method of manufacturing laminated wafer by high temperature laminating method

Abstract

To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated waferby forming a silicon film layer on a surfaceof an insulating substratecomprising the steps in the following order of: applying a surface activation treatment to both a surfaceof a silicon waferor a silicon waferto which an oxide film is layered and a surfaceof the insulating substratefollowed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated waferat a temperature of 200° C. to 350° C., and thinning the silicon waferby a combination of grinding, etching and polishing to form a silicon film layer.