The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8551439 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 08, 2013

Filed:

Sep. 15, 2009
Applicants:

Mitsutoshi Narukawa, Yokkaichi, JP;

Kenichi Watabe, Yokkaichi, JP;

Inventors:

Mitsutoshi Narukawa, Yokkaichi, JP;

Kenichi Watabe, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09C 1/56 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.


Find Patent Forward Citations

Narukawa, Mitsutoshi. (2013). Method of refining carbon parts for production of polycrystalline silicon (U.S. Patent No. 8551439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8551439

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