The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Nov. 27, 2008
Chien-li Kuo, Hsinchu, TW;
Chia-chun Sun, Taipei County, TW;
Chuan-hsien Fu, Taipei County, TW;
Chun-liang Hou, Hsinchu County, TW;
Yun-san Huang, Taipei County, TW;
Chien-Li Kuo, Hsinchu, TW;
Chia-Chun Sun, Taipei County, TW;
Chuan-Hsien Fu, Taipei County, TW;
Chun-Liang Hou, Hsinchu County, TW;
Yun-San Huang, Taipei County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An inverter structure is disclosed. The inverter structure includes an NMOS transistor and a PMOS transistor. Preferably, the NMOS transistor includes an n-type gate electrode and an n-type source/drain region, and the PMOS transistor includes a p-type gate electrode and a p-type source/drain region. Specifically, the n-type gate electrode and the p-type gate electrode are physically separated and electrically connected by a conductive contact.