The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Apr. 27, 2011
Olivier Joubert, Meylan, FR;
Benjamin Schwarz, San Jose, CA (US);
Jérémy Gilbert Maurice Pereira, Grenoble, FR;
Kevin Menguelti, Grenoble, FR;
Erwine Maude Pargon, Claix, FR;
Maxime Darnon, Grenoble, FR;
Olivier Joubert, Meylan, FR;
Benjamin Schwarz, San Jose, CA (US);
Jérémy Gilbert Maurice Pereira, Grenoble, FR;
Kevin Menguelti, Grenoble, FR;
Erwine Maude Pargon, Claix, FR;
Maxime Darnon, Grenoble, FR;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH, H, CH, CH, SiH, and HS. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.