The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Sep. 23, 2011
Dae-lok Bae, Seoul, KR;
Byung-lyul Park, Seoul, KR;
Pil-kyu Kang, Anyang-si, KR;
Gil-heyun Choi, Seoul, KR;
Kwang-jin Moon, Suwon-si, KR;
Dae-Lok Bae, Seoul, KR;
Byung-Lyul Park, Seoul, KR;
Pil-Kyu Kang, Anyang-si, KR;
Gil-Heyun Choi, Seoul, KR;
Kwang-Jin Moon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.