The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Apr. 06, 2012
Cynthia B. Brooks, Austin, TX (US);
Dwayne L. Labrake, Cedar Park, TX (US);
Niyaz Khusnatdinov, Round Rock, TX (US);
Michael N. Miller, Austin, TX (US);
Sidlgata V. Sreenivasan, Austin, TX (US);
David James Lentz, Leander, TX (US);
Frank Y. Xu, Round Rock, TX (US);
Cynthia B. Brooks, Austin, TX (US);
Dwayne L. LaBrake, Cedar Park, TX (US);
Niyaz Khusnatdinov, Round Rock, TX (US);
Michael N. Miller, Austin, TX (US);
Sidlgata V. Sreenivasan, Austin, TX (US);
David James Lentz, Leander, TX (US);
Frank Y. Xu, Round Rock, TX (US);
Molecular Imprints, Inc., Austin, TX (US);
Abstract
Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.