The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Feb. 03, 2011
Mayank Shrivastava, Essex Junction, VT (US);
Cornelius Christian Russ, Diedorf, DE;
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Mayank Shrivastava, Essex Junction, VT (US);
Cornelius Christian Russ, Diedorf, DE;
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Infineon Technologies AG, Neubiberg, DE;
Indian Institute of Technology Bombay, Mumbai, IN;
Abstract
In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region.