The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Feb. 01, 2012
Alan B. Botula, Essex Junction, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Alvin J. Joseph, Williston, VT (US);
Kenneth F. Mcavey, Shelburne, VT (US);
Gerd Pfeiffer, Poughquag, NY (US);
Richard A. Phelps, Colchester, VT (US);
Alan B. Botula, Essex Junction, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Alvin J. Joseph, Williston, VT (US);
Kenneth F. McAvey, Shelburne, VT (US);
Gerd Pfeiffer, Poughquag, NY (US);
Richard A. Phelps, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (O) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.