The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jan. 10, 2013
National Tsing Hua University, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
The present invention relates to a self alignment and assembly fabrication method for stacking multiple material layers, wherein a variety of homogeneous/heterogeneous materials can be stacked on a substrate by this self alignment and assembly fabrication method, without using any epitaxial buffer layers or gradient buffer layers; Moreover, these stacked materials can be single crystal, polycrystalline or non-crystalline phase materials. So that, by applying this self alignment and assembly fabrication method to fabricate a multi-layer device, not only the material cost can be effectively reduced, but the wafer alignment problem existing in the conventional wafer bonding process can also be solved. In addition, in the present invention, rapid melting growth (RMG) is used for growing the multiple crystallized materials laterally and rapidly from the substrate surface by liquid phase epitaxy, therefore the thermal budget can be largely reduced when fabricating the multi-layer device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile