The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jul. 06, 2011
Renata Camillo-castillo, Essex Junction, VT (US);
Peter B. Gray, Jericho, VT (US);
David L. Harame, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
Marwan H. Khater, Astoria, NY (US);
Qizhi Liu, Waltham, MA (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
Peter B. Gray, Jericho, VT (US);
David L. Harame, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
Marwan H. Khater, Astoria, NY (US);
Qizhi Liu, Waltham, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.