The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2013

Filed:

Jan. 29, 2010
Applicants:

Silvio J. Rabello, Palo Alto, CA (US);

William A. Mcgahan, Spicewood, TX (US);

Jie LI, Milpitas, CA (US);

Yongdong Liu, Cupertino, CA (US);

Inventors:

Silvio J. Rabello, Palo Alto, CA (US);

William A. McGahan, Spicewood, TX (US);

Jie Li, Milpitas, CA (US);

Yongdong Liu, Cupertino, CA (US);

Assignee:

Nanometrics Incorporated, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 4/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Asymmetry metrology is performed using at least a portion of Mueller matrix elements, including, e.g., the off-diagonal elements of the Mueller matrix. The Mueller matrix may be generated using, e.g., a spectroscopic or angle resolved ellipsometer that may include a rotating compensator. The Mueller matrix is analyzed by fitting at least a portion of the elements to Mueller matrix elements calculated using a rigorous electromagnetic model of the sample or by fitting the off-diagonal elements to a calibrated linear response. The use of the Mueller matrix elements in the asymmetry measurement permits, e.g., overlay analysis using in-chip devices thereby avoiding the need for special off-chip targets.


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