The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jun. 22, 2012
Masaya Okada, Osaka, JP;
Makato Kiyama, Osaka, JP;
Seiji Yaegashi, Yokohama, JP;
Ken Nakata, Yokohama, JP;
Masaya Okada, Osaka, JP;
Makato Kiyama, Osaka, JP;
Seiji Yaegashi, Yokohama, JP;
Ken Nakata, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Abstract
There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n-type GaN substratehaving a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n-type GaN drift layerin a first region R, and an SBD having an anode electrode in a second region R, the anode electrode being in Schottky contact with the d-type GaN drift layer. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n-type GaN substrate