The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Oct. 20, 2010
Harmeet Singh, Fremont, CA (US);
Sanket Sant, Fremont, CA (US);
Shang-i Chou, San Jose, CA (US);
Vahid Vahedi, Oakland, CA (US);
Raphael Casaes, Alameda, CA (US);
Seetharaman Ramachandran, Fremont, CA (US);
Harmeet Singh, Fremont, CA (US);
Sanket Sant, Fremont, CA (US);
Shang-I Chou, San Jose, CA (US);
Vahid Vahedi, Oakland, CA (US);
Raphael Casaes, Alameda, CA (US);
Seetharaman Ramachandran, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or HO. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.