The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Apr. 28, 2010
Hsing-kuo Hsia, Jhubei, TW;
Chih-kuang Yu, Chiayi, TW;
Ching-hua Chiu, Hsinchu, TW;
Troy Wu, Yonghe, TW;
Hsing-Kuo Hsia, Jhubei, TW;
Chih-Kuang Yu, Chiayi, TW;
Ching-Hua Chiu, Hsinchu, TW;
Troy Wu, Yonghe, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside and a backside, and providing a layer above the frontside of the substrate, the layer having a different composition from the substrate. The method further includes controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate, filling the opening with a conductive material to form a via, removing a portion of the backside of the substrate to expose the via, and electrically coupling a first element to a second element with the via. A semiconductor device fabricated by such a method is also disclosed.