The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Nov. 04, 2011
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
Navab Singh, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Shen Nansheng, Singapore, SG;
Rukmani Devi Sayanthan, Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
Navab Singh, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Shen Nansheng, Singapore, SG;
Rukmani Devi Sayanthan, Singapore, SG;
Unisantis Electronics Singapore Pte Ltd., Peninsula Plaza, SG;
Abstract
A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.