The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jun. 29, 2012
Go Miya, Hachioji, JP;
Seiichiro Kanno, Iwaki, JP;
Hiroyuki Kitsunai, Kasumigaura, JP;
Masaru Matsushima, Hitachinaka, JP;
Toru Shuto, Naka, JP;
Go Miya, Hachioji, JP;
Seiichiro Kanno, Iwaki, JP;
Hiroyuki Kitsunai, Kasumigaura, JP;
Masaru Matsushima, Hitachinaka, JP;
Toru Shuto, Naka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.