The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Nov. 13, 2008
Applicants:
Wonchul Lee, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
Shenjian Liu, San Ramon, CA (US);
Bryan Pu, San Jose, CA (US);
Inventors:
Wonchul Lee, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
Shenjian Liu, San Ramon, CA (US);
Bryan Pu, San Jose, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.